linear integrated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 4 90 - 9160 ? fax: 510 353 - 0261 doc 201143 05/21/2014 rev#a8 ecn# ls840 ls841 ls842 features low noise e n =8nv/hz typ. low leakage i g =10p a typ. low drift i v gs1 - 2 / ti=5v/oc max. low offset voltage iv gs1 - 2 i=2mv typ. absolute maximum ratings 1 @ 25 c (unless otherwise noted ) maximum temperatures storage temperature - 55 c to +150c operating junction temperature - 55 c to +150c maximum voltage and current for each transistor 1 - v gss gate voltage to drain or source 6 0v i g(f) gate forward current 1 0m a maximum power dissipation device dissipation 2 @ free air - total 4 0 0mw t a = + 25c electrical characteristics @ 25oc (unless otherwise noted) symbol characteristic ls840 ls841 ls842 units conditions i v gs1 - 2 / ti max. drift vs. temperature 5 10 40 v/oc v dg = 20v i d = 200a t a = - 55oc to +125oc iv gs1 - 2 i max. offset voltage 5 10 25 ma v dg = 20v i d = 200a symbol characteristic 3 min. typ. max. units conditions bv gss breakdown voltage - 60 -- -- v v ds = 0 i d = - 1 na bv g go gate - to - gate breakdown 6 0 -- -- v i g go = 1 a i d = 0 i s = 0 transconductance g f ss full conduction 100 0 40 00 s v dg = 2 0v v gs = 0 f = 1khz g f s typical conduction 5 0 0 10 00 s v dg = 2 0 v i d = 20 0a g fs 1 4 g fs 2 mismatch transconductance ratio 0.9 7 1.0 drain current v dg = 20v v gs = 0 i dss full conduction 0.5 2 5 ma i dss1 4 i dss 2 drain current ratio 0.95 1. 0 gate - source v gs (off) pinchoff voltage - 1 - 2 - 4 .5 v v ds = 2 0 v i d = 1na v gs operating range - 0.5 -- - 4 v v d s = 2 0v i d = 20 0a gate current - i g operating -- 1 0 50 pa v d g = 20v i d = 200 a - i g high temperature -- -- 50 na v dg = 20v i d = 200 a t a =+125oc - i g reduced vdg -- 5 -- pa v dg = 10v i d = 200 a - i gss at full conduction -- -- 100 pa v dg = 20v v d s = 0 ls840 ls841 ls842 low noise low drift low capacitance monolithic dual n - channel jfet amplifier to - 71 /78 top view soic top view
linear integrated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 4 90 - 9160 ? fax: 510 353 - 0261 doc 201143 05/21/2014 rev#a8 ecn# ls840 ls841 ls842 symbol characteristic min. typ. max. units conditions output conductance g oss full cond uction -- -- 10 s v dg = 20v v gs = 0 g os operating -- 0.1 1 s v dg = 20v i d = 200a g os 1 - 2 differential -- 0.01 0.1 s common mode rejection cmrr - 20 log v gs1 - 2 / v ds -- 100 -- db v ds = 10 to 20v i d =200a cmrr -- 75 -- db v ds = 5 to 10v i d =200a noise nf figure -- -- 0.5 db v ds = 20v v gs = 0 r g =10m f= 100hz nbw= 6hz e n voltage -- -- 10 nv/hz v ds = 20v i d = 200a f= 1khz nbw= 1hz e n voltage -- -- 15 nv/hz v ds = 20v i d = 200a f= 10hz nbw= 1hz capacitance c iss input -- 4 10 pf v ds = 20v i d =200a c rss reverse transfer -- 1.2 5 pf c dd drain - to - drain -- 0.1 -- pf v dg = 20v i d = 200a notes: 1. these ratings are limiting values above which the serviceability of any semiconductor may be impaired 2. derate 4mw/ oc above 25o c 3. all min/typ/max limits are absolute numbers. negative signs indicate electrical polarity only. 4. assumes smaller number in the num erator. information furnished by linear integrated systems is believed to be accurate and reliable. however, no responsibility is ass umed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no l icense is granted by implication or otherwise under any patent or patent rights of linear integrated systems. note: all dimensions in inches 0.210 0.170 linear integrated systems (lis) is a 25 - year - old, third - generation precision semiconductor company providing high - quality discrete components. expertise brought to lis is based on processes and products developed at amelco, union carbide, intersil and micro power systems by company president joh n h. hall. hall, a protg of silicon valley legend dr. jean hoerni, was the director of ic development at union carbide, co - founder and vice president of r&d at intersil, and founder/president of micro power systems. to - 71 to - 78 p - dip soic
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